i) PMOS in NAND is in parallel while that in NOR is in series
ii) Parallel PMOS makes a stronger pull up network than serial PMOS
iii) Since hole mobility is lesser than electron mobility, NAND-based design is faster than that of NOR-based design (because of parallel PMOS)
iv) t_phl and t_plh (high to low, low to high times) are more symmetric in NAND than in NOR. t_plh of NOR is slower because of the series PMOS.
Very Good info
ReplyDeleteIs this still true in the case of 14nm and beyond where hole mobility is now almost equal to electron mobility?
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